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VGF Crucible
1. Product Instruction
VGF is the main technology for GaAs and InP compound
semiconductor single crystal growth in the world.
VGF crucible is the ideal vessel for single crystal growth by VGF.
2. Product Feature
High Purity (99.999%)
No wetting with melt metalVGF is the main technology for GaAs and InP compound
semiconductor single crystal growth in the world.
VGF crucible is the ideal vessel for single crystal growth by VGF.
2. Product Feature
High Purity (99.999%)
Thermal conductivity controllable, improve the rate of yield
Excellent thermal shock resistance
Easy cleaning and Reusability
Inert, no reaction with acid and alkali
- Specification
- Parameter
- Application
- Download
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Catalog No Application Inside Diameter Height Thickness BV-2 VGF 2" 10" 0.035" BV-3 VGF 3" 10" 0.035" BV-4 VGF 4" 8" 0.035" BV-5 VGF 5" 8" 0.04" BV-6 VGF 6" 7" 0.04" BV-8 VGF 8" 20" 0.08" *This form is for typical sizes, other size is customizable.
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Parameter of PBN
Properties Units Values Density g/cm3 1.95-2.20 Tensile Strength MPa 112 Bending Strength MPa 173 Compression Strength MPa 154 Young's Modulus GPa 18 Thermal Conductivity W/m°C "a" 60 "c" 2 Specific Heat J/g·℃ 0.90(RT) Resistivity Ω.cm 2x1015 Dielectric Strength D.C. volts/mm 2x1015 Dielectric Constant "c" 3.07 Metal Impurity Content ppm <10
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